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參數資料
| 型號： | FDP55N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 55 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 1188K |
| 代理商： | FDP55N06 |
4
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 27.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP55N06
for FDPF55N06
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
1 ms
10
μ
s
DC
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
1 ms
10
μ
s
DC
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
I
D
,
T
C
, Case Temperature [
o
C]
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| FDP5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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