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參數資料
| 型號： | FDP6670AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 156K |
| 代理商： | FDP6670AS |
May 2003
2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench
ò
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
80 A, 30 V
R
DS(ON)
= 6.5 m
@ V
GS
= 10 V
R
DS(ON)
= 8.5 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
30
±
20
80
240
68
0.45
–65 to +175
Units
V
V
A
(Note 1)
(Note 1)
W
Derate above 25
°
C
W/
°
C
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.2
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB6670AL
FDB6670AL
FDP6670AL
FDP6670AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
F
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| FDP6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDP7030 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDP7030BL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDP7030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP6670AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDP6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDP6670S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6676 | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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