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參數資料
| 型號： | FDP8447L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ |
| 中文描述： | 50 A, 40 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 195K |
| 代理商： | FDP8447L |
2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
www.fairchildsemi.com
1
F
N
tm
May 2007
FDP8447L
N-Channel PowerTrench
MOSFET
40V, 50A, 8.7m
Features
Max r
DS(on)
= 8.7m
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11.2m
at V
GS
= 4.5V, I
D
= 11A
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low r
DS(on)
and optimized BV
DSS
capability to offer superior
performance benefit in the application.
Applications
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
50
65
12
100
153
60
2
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1)
-Pulsed
Drain-Source Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1)
2.1
62.5
°C/W
Device Marking
FDP8447L
Device
FDP8447L
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50units
D
G
S
D
G
S
TO-220
FDP Series
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP8447L | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
| FDP8860 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8870_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8870_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW |
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