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參數(shù)資料
型號: FDP8880
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 6/11頁
文件大小: 231K
代理商: FDP8880
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
F
6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.3
0.6
0.9
1.2
1.5
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
1000
2000
0.1
10
30
100
C
V
DS
, DRAIN 1
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
5
10
15
20
25
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 54A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
相關(guān)PDF資料
PDF描述
FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDP8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ
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FDP8N50NZ 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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