欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDR838P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 2.5V Specified PowerTrenchTM MOSFET
中文描述: 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁數: 1/8頁
文件大小: 204K
代理商: FDR838P
F
FDR838P, Rev. C
FDR838P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
March 1999
Features
-8 A, -20 V. R
DS(
ON
)
= 0.017
@ V
GS
= -4.5 V
R
DS(
ON)
= 0.024
@ V
GS
= -2.5 V
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-8
-50
1.8
1.0
0.9
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.
838P
Device
FDR838P
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
1
5
6
7
8
4
3
2
D
S
D
D
S
D
G
SuperSOT -8
D
相關PDF資料
PDF描述
FDR840P Thermoelectric Cooler Controller
FDW2520C Thermoelectric Cooler Controller
FDR840 P-Channel 2.5V Specified PowerTrench MOSFET
FDR840P P-Channel 2.5V Specified PowerTrench MOSFET
FDR842P P-Channel 1.8V Specified PowerTrench MOSFET
相關代理商/技術參數
參數描述
FDR838P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8
FDR840 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET
FDR840P 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR842P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR842P_Q 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 宜阳县| 聊城市| 陆河县| 攀枝花市| 朝阳市| 永平县| 分宜县| 浙江省| 鱼台县| 米泉市| 霍山县| 东至县| 高雄市| 洛阳市| 衡水市| 郁南县| 二连浩特市| 正安县| 灵寿县| 平遥县| 苍山县| 邢台市| 齐齐哈尔市| 迭部县| 克拉玛依市| 道孚县| 会东县| 泸州市| 合阳县| 岗巴县| 武定县| 固镇县| 沾化县| 汪清县| 甘德县| 壶关县| 中宁县| 道孚县| 肇州县| 固原市| 开封市|