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參數資料
| 型號： | FDR858P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 261K |
| 代理商： | FDR858P |
February 1999
FDR858P
Single P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Draint Current - Continuous
(Note 1)
- Pulsed
Ratings
-30
Units
V
±20
V
-8
A
-50
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
FDR858P Rev.C
-8 A, -30 V. R
DS(ON)
= 0.019
@ V
GS
= -10 V,
R
DS(ON)
= 0.028
@ V
GS
= -4.5 V.
Low gate charge (21nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-8 package: small footprint (40%) less than
SO-8); low profile (1mm thick); maximum power
comperable to SO-8.
The SuperSOT-8 family of P-Channel Logic Level
MOSFETs have been designed to provide a low profile,
small footprint alternative to industry standard SO-8 little
foot type product.
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1999 Fairchild Semiconductor Corporation
1
5
6
7
8
4
3
2
D
S
D
D
S
D
G
SuperSOT -8
Mark: 858P
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDRH20 | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDRH2076-470M | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDS 09 L 1000 | 制造商:Fischer Elektronik GmbH & Co KG 功能描述: |
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