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參數資料
| 型號： | FDS2070N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4100 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁數： | 5/6頁 |
| 文件大小： | 200K |
| 代理商： | FDS2070N3 |
FDS2070N7 Rev C2(W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 4.1A
V
DS
= 25V
75V
50V
0
500
1000
1500
2000
2500
0
30
60
90
120
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 85
o
C/W
T
A
= 25
o
C
10ms1ms
100μs
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 85°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 85 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS2070N7 | 功能描述:MOSFET 150V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS20R | 制造商:Siemens 功能描述: |
| FD-S21 | 制造商:PANASONIC ELECTRIC WORKS - ACSD 功能描述:1.5MM DIFFUSE REFLECT R2 RADIUS 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:1.5MM DIFFUSE REFLECT R2 RADIUS 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 80MM; Fiber Optic Sensor Type:Reflective; Sensing Range Max:80mm; Sensing Range:0mm to 80mm ;RoHS Compliant: Yes |
| FDS2170N3 | 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2170N7 | 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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