- 您現在的位置：買賣IC網 > PDF目錄375781 > FDS3512 (FAIRCHILD SEMICONDUCTOR CORP) 80V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDS3512 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 80V N-Channel PowerTrench MOSFET |
| 中文描述： | 4000 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 86K |
| 代理商： | FDS3512 |
May 2001
FDS3512
80V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
4.0 A, 80 V
R
DS(ON)
= 70 m
@ V
GS
= 10 V
R
DS(ON)
= 80 m
@ V
GS
= 6 V
Low gate charge (13nC Typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
6
7
8
5
3
2
1
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
80
±
20
4.0
30
2.5
1.2
1.0
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS3512
FDS3512
50
25
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS3570 | 80V N-Channel PowerTrench⑩ MOSFET |
| FDS3572 | N-Channel PowerTrench MOSFET |
| FDS3580 | CAP CER 33000PF 630V X7R 1210 |
| FDS3590 | 80V N-Channel PowerTrench MOSFET |
| FDS3601 | CAP CER 15000PF 1KV 10% X7R 1210 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS3512_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3570 | 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3570 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS3570_00 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDS3570TR | 制造商:Fairchild Semiconductor Corporation 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。