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參數資料
| 型號： | FDS3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз |
| 中文描述： | 7.5 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 266K |
| 代理商： | FDS3672 |
2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
F
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
2
4
6
8
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
R
θ
JA
=50
o
C/W
10
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
5
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
IN THIS REGION
V
GS
= 10V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 7.5A, SOIC |
| FDS3672_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 7.5A, 22m?? |
| FDS3672_Q | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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