- 您現在的位置：買賣IC網 > PDF目錄375781 > FDS4488 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDS4488 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | FDS4488 |
December 2001
2001 Fairchild Semiconductor Corporation
FDS4488 Rev B (W)
FDS4488
30V N-Channel PowerTrench
ò
MOSFET
General Description
This NChannel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low in-
line power loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
7.9 A, 30 V.
R
DS(ON)
= 22 m
@ V
GS
= 10 V
R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
Low gate charge (9.5 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
S
D
D
S
S
S
SO-8
D
D
D
G
D
D
D
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
25
7.9
40
2.5
1.2
1.0
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS4488
FDS4488
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS4501H | Complementary PowerTrench Half-Bridge MOSFET |
| FDS4559 | 60V Complementary PowerTrench MOSFET |
| FDS4672A | 40V N-Channel PowerTrench MOSFET |
| FDS4675 | 40V P-Channel PowerTrench MOSFET |
| FDS4685 | 40V P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS4501H | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4559 | 功能描述:MOSFET 60V/-60V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4559 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS4559_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V Complementary PowerTrench???MOSFET |
| FDS4559_F085 | 功能描述:MOSFET 60V Complementary PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。