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參數資料
| 型號： | FDS6570A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 15000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 201K |
| 代理商： | FDS6570A |
F
FDS6570A Rev. C
FDS6570A
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
advanced
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Battery protection
March 2000
Features
15 A, 20 V. R
DS(on)
= 0.0075
@ V
GS
= 4.5 V
R
DS(on)
= 0.010
@ V
GS
= 2.5 V.
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
FDS6570A
20
±
8
15
50
2.5
1.2
1
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
FDS6570A
Device
FDS6570A
Reel Size
13
’’
Tape Width
12mm
Quantity
2500 units
6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G
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| FDS6572A | 30V N-Channel PowerTrench MOSFET |
| FDS6574A | 30V N-Channel PowerTrench MOSFET |
| FDS6575 | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6576 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6609A | P-Channel Logic Level PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6572A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6574A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6574A_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET |
| FDS6575 | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6575 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETP SO-8 ((NW)) |
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