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參數(shù)資料
| 型號(hào)： | FDS6609A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 646K |
| 代理商： | FDS6609A |
FDS6609A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
-30
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25
°
C
-22
mV/
°
C
V
DS
= -24 V,
V
GS
= 20 V,
V
GS
= -20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
-1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–1
–1.5
–3
V
Gate Threshold Voltage
4
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –7.0A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –10 V,
I
D
= –7.0 A
I
D
= –7.0 A
I
D
= –5.5 A
0.027
0.04
0.04
0.032
0.05
0.54
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
14.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
930
278
114
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12
11
33
13
18
2.5
4.1
21
20
52
23
29
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –7.2 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
A
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.76
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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