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參數(shù)資料
型號(hào): FDS6675
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Single P-Channel, Logic Level, PowerTrenchTM MOSFET
中文描述: 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 115K
代理商: FDS6675
FDS6675 Rev.C1
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage
.
Figure 3. On-Resistance Variation with
Temperature
.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
0.6
1.2
1.8
2.4
3
0
10
20
30
40
50
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
-6.0V
-4.5V
-3.5V
-3.0V
V = -10V
0
10
20
30
40
50
0.5
1
1.5
2
2.5
- I , DRAIN CURRENT (A)
D
V = -3.5V
R
D
-10V
-7.0V
-4.0V
-5.5V
-4.5 V
0
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
- V , GATE TO SOURCE VOLTAGE (V)
R
D
25° C
I = -5.5A
D
J
1
2
3
4
5
0
10
20
30
40
50
- V , GATE TO SOURCE VOLTAGE (V)
-
V = -5.0V
D
J
125° C
25° C
0
0.4
0.8
1.2
0.001
0.01
0.1
1
10
50
- V , BODY DIODE FORWARD VOLTAGE (V)
-
25° C
-55° C
V = 0V
S
J
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (° C)
D
R
D
V = -10V
I = -11A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6675 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
FDS6675_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6675A 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6675BZ 功能描述:MOSFET -30V P-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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