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參數資料
| 型號： | FDS6676 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 542K |
| 代理商： | FDS6676 |
2
www.fairchildsemi.com
FDS6676AS Rev. A (X)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 1 mA, Referenced to 25
= 0 V, I
D
= 1 mA
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
°
C
28
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 1 mA, Referenced to 25
= V
GS
, I
D
= 1 mA
1
1.5
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
°
C
–3.3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
V
GS
V
DS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
= 14.5 A
= 13.2 A
= 14.5A, T
J
= 125
°
C
4.9
5.9
6.7
6.0
7.25
8.5
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
= 10 V, V
DS
= 14.5 A
= 5 V
50
A
Forward Transconductance
= 10 V, I
D
66
S
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
2510
pF
C
oss
Output Capacitance
710
pF
C
rss
Reverse Transfer Capacitance
270
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
10
20
ns
t
r
Turn–On Rise Time
12
22
ns
t
d(off)
Turn–Off Delay Time
43
69
ns
t
f
Turn–Off Fall Time
29
46
ns
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 4.5 V, R
D
= 1 A,
GEN
= 6
17
31
ns
t
r
Turn–On Rise Time
22
35
ns
t
d(off)
Turn–Off Delay Time
34
54
ns
t
f
Turn–Off Fall Time
29
46
ns
Q
g(TOT)
Total Gate Charge at Vgs=10V
V
DD
= 15 V, I
D
= 14.5 A,
45
63
nC
Q
g
Total Gate Charge at Vgs=5V
25
35
nC
Q
gs
Gate–Source Charge
7
nC
Q
gd
Gate–Drain Charge
8
nC
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| FDS6676S | 30V N-Channel PowerTrench? SyncFET |
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| FDS6679Z | 30 Volt P-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6676 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6676AS | 功能描述:MOSFET 30V NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6676AS_0511 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET |
| FDS6676AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6676AS_G | 制造商:Fairchild 功能描述:30V N-Channel PowerTrench SyncFET |
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