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參數資料
| 型號： | FDS6676S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench? SyncFET |
| 中文描述： | 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 5/6頁 |
| 文件大小： | 121K |
| 代理商： | FDS6676S |
FDS6676S Rev F1 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
Figure 12. FDS6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
F
TIME : 12.5ns/div
typ t
RR
: 31ns
typ I
RM
: 2.4A
C
TIME : 12.5ns/div
typ t
RR
: 31ns
typ I
RM
: 1.8A
C
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6678A | 30V N-Channel PowerTrench MOSFET |
| FDS6679Z | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6679 | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6680AS | 30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 30V N-Channel PowerTrench SyncFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6678A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6679 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6679 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6679_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30 Volt P-Channel PowerTrench㈢ MOSFET |
| FDS6679AZ | 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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