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參數(shù)資料
| 型號： | FDS6680A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 102K |
| 代理商： | FDS6680A |
November 2004
FDS6680A
Single N-Channel, Logic Level, PowerTrench
MOSFET
2004 Fairchild Semiconductor Corporation
FDS6680A Rev F1(W)
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
12.5 A, 30 V
R
DS(ON)
= 9.5 m
@ V
GS
= 10 V
R
DS(ON)
= 13 m
@ V
GS
= 4.5 V
Ultra-low gate charge
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
12.5
50
2.5
1.2
1.0
–55 to +150
Units
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
25
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6680A
FDS6680A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6680S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDS6681Z | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6682 | 30V N-Channel PowerTrench MOSFET |
| FDS6685 | P-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6688S | 30V N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6680A_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench?? MOSFET |
| FDS6680A_Q | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6680A Series N-Channel 30 V 9.5 mOhm Logic Level PowerTrench Mosfet -SOIC-8 |
| FDS6680AS | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
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