- 您現在的位置：買賣IC網 > PDF目錄375783 > FDS6680S (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench SyncFET⑩ PDF資料下載
參數資料
| 型號： | FDS6680S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 0.011 ohm, Si, POWER, FET |
| 封裝： | SOIC-8 |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 222K |
| 代理商： | FDS6680S |
FDS6680S Rev A (W)
Typical Characteristics
0
10
20
30
40
50
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
5.0V
4.5V
4.0V
3.5V
3.0V
V
GS
= 10V
7.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
6.0V
8.0V
10V
5.0V
4.5V
7.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 11.5A
V
GS
= 10V
0
0.01
0.02
0.03
0.04
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 6A
T
A
= 100
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
100
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 100
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6681Z | 30 Volt P-Channel PowerTrench MOSFET |
| FDS6682 | 30V N-Channel PowerTrench MOSFET |
| FDS6685 | P-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6688S | 30V N-Channel PowerTrench SyncFET |
| FDS6688 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680S_D84Z | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6681Z | 功能描述:MOSFET 30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6681Z | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6681Z_G | 制造商:Fairchild 功能描述:30V P-Channel PowerTrench? MOSFET |
發布緊急采購，3分鐘左右您將得到回復。