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參數資料
| 型號： | FDS6690S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 262K |
| 代理商： | FDS6690S |
May 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDS6690S Rev B(W)
FDS6690S
30V N
-
Channel PowerTrench
ò
SyncFET
General Description
The FDS6690S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDS6690S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690S as the low-side switch in a synchronous
rectifier is close to the performance of the FDS6690A in
parallel with a Schottky diode.
Applications
DC/DC converter
Motor drives
Features
10 A, 30 V.
R
DS(ON)
= 0.016
@ V
GS
= 10 V
R
DS(ON)
= 0.024
@ V
GS
= 4.5 V
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
10
50
2.5
1.2
1
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690S
FDS6690S
13’’
12mm
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6690 | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6690AS | 30V N-Channel PowerTrench SyncFET |
| FDS6690AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDS6692 | 30V N-Channel PowerTrench MOSFET |
| FDS6694 | 30V N-Channel Fast Switching PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6690S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6692 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6692A | 功能描述:MOSFET 30V 9A 11.5 OHM NCH POWER TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6692A_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 9A, 11.5m?? |
| FDS6694 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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