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參數(shù)資料
| 型號： | FDS6815 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| 中文描述： | 5.5 A, 20 V, 0.04 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 231K |
| 代理商： | FDS6815 |
F
8
F
8
F
8
F
8
SOIC-8 Unit Orientation
Conductive Embossed
Carrier Tape
F63TNR
Label
ESD Label
Antistatic Cover Tape
SOIC(8lds) Packaging
Configuration:
Figure 1.0
Components
Leader Tape
390mm minimum
Trailer Tape
160mm minimum
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Cover Tape
Carrier
Pin 1
Tape
Note/Comments
Bulk
Packaging Option
SOIC (8lds) Packaging Information
Standard
(no flow code)
TNR
L86Z
S62Z
Packaging type
Reel Size
13” Dia
Rail/Tube
-
Bag
-
Qty per Reel/Tube/Bag
2,500
95
200
Box Dimension (mm)
343x64x343
530x130x83
76x102x127
Max qty per Box
5,000
30,000
1,000
D84Z
TNR
7” Dia
500
184x187x47
2,500
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
-
0.1182
N
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842
QTY1:
SPEC REV: QARV:
SPEC:
QTY: 2500
(F63TNR)2
F63TNLabel
ESD Label
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
Customized
Label
SO-8 Tape and Reel Data and Package Dimensions
November 1998, Rev. A
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6875 | Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6890A | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6892AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6875 | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6875 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6890A | 功能描述:MOSFET SO-8 DUAL N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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