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參數資料
| 型號： | FDS6875 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 194K |
| 代理商： | FDS6875 |
FDS6875 Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage
.
Figure 3. On-Resistance Variation with
Temperature
.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
0.6
1.2
1.8
2.4
3
0
5
10
15
20
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
-2.0V
-2.5V
-3.0V
V = -4.5V
0
4
8
12
16
20
0.5
1
1.5
2
2.5
- I , DRAIN CURRENT (A)
D
V = -2.0V
R
D
-4.5V
-2.5 V
-3.5 V
-3.0 V
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.1
- V , GATE TO SOURCE VOLTAGE (V)
R
D
25° C
TA
I = -3.0A
0.5
1
1.5
2
2.5
0
5
10
15
20
- V , GATE TO SOURCE VOLTAGE (V)
-
V = -5.0V
D
J
125° C
25° C
0
0.3
0.6
0.9
1.2
0.001
0.01
0.1
1
5
20
- V , BODY DIODE FORWARD VOLTAGE (V)
-
25° C
-55° C
V = 0V
S
J
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (° C)
D
R
D
V = -4.5V
I = -6A
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PDF描述 |
|---|---|
| FDS6890A | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDS6892AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6875 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| FDS6890A | 功能描述:MOSFET SO-8 DUAL N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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