- 您現在的位置：買賣IC網 > PDF目錄375783 > FDS6894 (Fairchild Semiconductor Corporation) Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDS6894 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 中文描述： | 雙N溝道邏輯電平PWM優化的PowerTrench MOSFET的 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 82K |
| 代理商： | FDS6894 |
FDS6894A Rev C (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 4.5V
1.8V
2.5V
2.0V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= 1.8V
4.5V
3.0V
2.5V
3.5V
2.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 8A
V
GS
= 4.5V
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
0.8
1.1
1.4
1.7
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6898AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6898A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6900AS | Dual N-Ch PowerTrench SyncFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6894A | 功能描述:MOSFET Dual NCh Logic Level PWM; PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6894AZ | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6898A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6898A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL N SMD SO-8 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, DUAL, N, SMD, SO-8 |
| FDS6898A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
發布緊急采購，3分鐘左右您將得到回復。