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參數資料
| 型號： | FDS6961 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 雙N溝道MOSFET的邏輯電平PowerTrenchTM |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 241K |
| 代理商： | FDS6961 |
April 1999
FDS6961A
Dual N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced
using
Fairchild
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
3.5 A, 30 V. R
DS(ON)
= 0.090
@ V
GS
= 10 V
R
DS(ON)
= 0.140
@ V
GS
= 4.5 V.
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
- Pulsed
3.5
14
A
P
D
Power Dissipation for Single Operation
(Note 1)
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS6961A Rev.C
Fast switching speed.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Semiconductor's
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6961A
pin
1
1
5
7
8
2
3
4
6
1999 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6961A | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 30V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes |
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6961A_F011 | 功能描述:MOSFET Dual NCh PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6961A_L99Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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