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參數(shù)資料
| 型號(hào)： | FDS6990 |
| 廠(chǎng)商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 雙30V的N溝道的PowerTrench式SyncFET |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 86K |
| 代理商： | FDS6990 |
FDS6990S Rev B (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6990S.
Figure 12. FDS6990S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6990A).
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10ns/div
3
F
10ns/div
3
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
125
o
C
25
o
C
0V
0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6990AS | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990AS_NL | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6993 | Dual P-Channel PowerTrench MOSFET |
| FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6990A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6990A_D84Z | 功能描述:MOSFET S0-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6990A_Q | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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