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參數資料
| 型號： | FDS6990S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 7.5 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | FDS6990S |
May 2001
FDS6990S
Dual 30V N
-
Channel PowerTrench
ò
SyncFET
2001 Fairchild Semiconductor Corporation
FDS6990S Rev B(W)
General Description
The FDS6990S is designed to replace a dual SO-8
MOSFET and two Schottky diodes in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. Each MOSFET
includes integrated Schottky diodes using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6990S as the low-side switch in a synchronous
rectifier is similar to the performance of the FDS6990A
in parallel with a Schottky diode.
Applications
DC/DC converter
Motor drives
Features
7.5A, 30 V.
R
DS(ON)
= 22 m
@ V
GS
= 10 V
R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
D
SO-8
D
D
D
D2
D2
D1
D1
S2
G2S1
G1
Pin 1
SO-8
4
5
3
6
2
7
1
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Ratings
30
Units
V
±
20
7.5
20
V
A
(Note 1a)
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
1.6
1
0.9
W
°
C
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
–55 to +150
(Note 1a)
78
°
C/W
°
C/W
(Note 1)
40
Reel Size
Tape width
Quantity
FDS6990S
FDS6990S
13’’
12mm
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6990AS | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990AS_NL | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6993 | Dual P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6990S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6993 | 功能描述:MOSFET Dual PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6993_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:4.3 A, 30 V, 0.055 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| FDS6994S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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