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參數資料
| 型號： | FDS7066N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 23000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 188K |
| 代理商： | FDS7066N3 |
2004 Fairchild Semiconductor Corporation
FDS7066SN3 Rev C2 (W)
FDS7066SN3
30V N
-
Channel PowerTrench
SyncFET
January 2004
General Description
The FDS7066SN3 is designed to replace a single SO-8
FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. The FDS7066SN3
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS7066SN3 as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS7066N3 in parallel with a Schottky diode.
Applications
DC/DC converter
Motor drivesFeatures
Features
19 A, 30 V
R
DS(ON)
= 5.5 m
@ V
GS
= 10 V
R
DS(ON)
= 6.0 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
16
19
60
3.0
1.7
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7066SN3
FDS7066SN3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS7079ZN3 | TV 29C 29#16 SKT RECP |
| FDS7082N3 | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS7066N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS7066N7_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS7066SN3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS7079ZN3 | 功能描述:MOSFET 30V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS7082N3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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