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參數資料
| 型號： | FDS8876 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12.5 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 262K |
| 代理商： | FDS8876 |
April 2005
F
2005 Fairchild Semiconductor Corporation
FDS8876 Rev. A
www.fairchildsemi.com
1
FDS8876
N-Channel PowerTrench
MOSFET
30V, 12.5A, 8.2m
Features
r
DS(ON)
= 8.2m
, V
GS
= 10V, I
D
= 12.5A
r
DS(ON)
= 10.2m
, V
GS
= 4.5V, I
D
= 11.4A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8
相關PDF資料 |
PDF描述 |
|---|---|
| FDS8876_NL | N-Channel PowerTrench MOSFET |
| FDS8878 | N-Channel PowerTrench MOSFET |
| FDS8880 | N-Channel PowerTrench MOSFET |
| FDS8896 | N-Channel PowerTrench?? MOSFET |
| FDS8926A | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS8876_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ |
| FDS8876_F123 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8876_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8878 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8878_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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