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參數資料
型號: FDS8878
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 10.2 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 3/12頁
文件大小: 634K
代理商: FDS8878
F
FDS8878 Rev. A1
www.fairchildsemi.com
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 10.7A, V
= 30V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
FDS8878_NL is lead free product. FDS8878_NL marking will appear on the reel label.
V
DD
= 15V, I
D
= 10.2A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
-
7
29
45
18
-
54
-
-
-
-
94
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 10.2A
I
SD
= 2.1A
I
SD
= 10.2A, dI
SD
/dt=100A/
μ
s
I
SD
= 10.2A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
19
9.5
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數
參數描述
FDS8878_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDS8878_F123 功能描述:MOSFET 30V N-CHAN 10.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8878_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDS8880 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8880 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process
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