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參數資料
| 型號： | FDS8936 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 229K |
| 代理商： | FDS8936 |
May 1998
FDS8936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDS8936A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS8936A Rev.B
6 A, 30 V. R
DS(ON)
= 0.028
@ V
GS
= 10 V,
R
DS(ON)
= 0.040
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
1
5
7
8
2
3
4
6
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
8936A
pin
1
1998 Fairchild Semiconductor Corporation
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| FDS8936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8947A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958 | Dual N & P-Channel PowerTrench MOSFET |
| FDS8960C | Dual N & P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS8936A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8936S | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8947A | 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8949 | 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
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