- 您現在的位置：買賣IC網 > PDF目錄375785 > FDS8947A (FAIRCHILD SEMICONDUCTOR CORP) Dual P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | FDS8947A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 4 A, 30 V, 0.052 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 239K |
| 代理商： | FDS8947A |
FDS8947A Rev.B
0
4
8
12
16
20
0.5
1
1.5
2
2.5
3
-I , DRAIN CURRENT (A)
D
V =-3.5V
R
D
-5.0V
-4.5V
-4.0V
-10V
-6.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -4.0A
Figure 3. On-Resistance Variation with
Temperature
.
1
2
3
4
5
6
0
5
10
15
20
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5V
J
125°C
25°C
Figure 5. Transfer Characteristics
.
0
0.3
0.6
0.9
1.2
1.5
0.0001
0.001
0.01
0.1
1
5
20
-V , BODY DIODE FORWARD VOLTAGE (V)
-
S
25°C
-55°C
V = 0V
J
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.05
0.1
0.15
0.2
0.25
0.3
-V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
I = -2A
T = 125°C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0
5
10
15
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
V =-10V
D
-4.0V
-4.5V
-3.5V
-3.0V
-6.0V
-5.0V
相關PDF資料 |
PDF描述 |
|---|---|
| FDS8958A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958 | Dual N & P-Channel PowerTrench MOSFET |
| FDS8960C | Dual N & P-Channel PowerTrench MOSFET |
| FDS8962C | Dual N & P-Channel Power Trench |
| FDS8978 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS8949 | 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDS8949_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET |
| FDS8949_F085 | 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8958 | 功能描述:MOSFET 30V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。