- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375785 > FDS8958 (FAIRCHILD SEMICONDUCTOR CORP) Dual N & P-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS8958 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 233K |
| 代理商： | FDS8958 |
FDS8958 Rev A(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -20 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
All
All
30
-30
V
Breakdown Voltage
25
-22
mV/
°
C
1
-1
100
-100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= -10 V, I
D
= -5 A
V
GS
= -10 V, I
D
= -5 A, T
J
= 125
°
C
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 7 A
V
DS
= -5 V, I
D
=-5 A
Q1
Q2
Q1
Q2
Q1
1
-1
1.6
-1.7
-4.3
4
21
32
27
41
58
58
3
-3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
28
42
40
52
78
80
m
Q2
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
g
FS
Forward Transconductance
19
11
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
789
690
173
306
66
77
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
pF
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS8960C | Dual N & P-Channel PowerTrench MOSFET |
| FDS8962C | Dual N & P-Channel Power Trench |
| FDS8978 | 30V N-Channel PowerTrench MOSFET |
| FDS9400A | 30V P-Channel PowerTrench MOSFET |
| FDS9400 | 30V P-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS8958A | 功能描述:MOSFET SO8 COMP N-P-CH T/R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8958A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8 |
| FDS8958A_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N and P-Channel PowerTrench MOSFET |
| FDS8958A_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrenchO MOSFET |
| FDS8958A_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。