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參數資料
| 型號： | FDS8962C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 185K |
| 代理商： | FDS8962C |
FDS8962C Rev A (W)
Typical Characteristics: Q2 (P-Channel)
0
10
20
30
0
1
2
3
4
5
6
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-3.0V
-3.5V
-4.0V
-4.5V
V
-5.0V
V
-6.0V
V
0.8
1
1.2
1.4
1.6
1.8
2
0
6
12
18
24
30
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-4.0V
-4.5V
-6.0V
-7.0V
-8.0V
-10V
-5.0V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -5A
V
GS
= -10V
0
0.05
0.1
0.15
0.2
0.25
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDS8978_F123 | 功能描述:MOSFET 30V N-CHAN 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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