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參數(shù)資料
型號: FDSS2407
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Dual MOSFET
中文描述: 3.3 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 5/13頁
文件大小: 680K
代理商: FDSS2407
FDSS2407 Rev. A
www.fairchildsemi.com
F
5
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
(Continued) T
A
= 25°C unless otherwise noted
0.1
1
10
100
1
10
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
10ms
100
μ
s
1ms
R
θ
JA
= 55
o
C/W
1
10
0.01
0.1
1
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
5
10
15
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
0
0.5
1.0
1.5
2.0
2.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 10V
90
120
150
180
210
240
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 3.3A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 3.3A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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