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參數資料
| 型號： | FDT434 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數： | 2/8頁 |
| 文件大小： | 244K |
| 代理商： | FDT434 |
FDT434P Rev. C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–28
mV/
°
C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= 0 V
V
DS
= 0 V
–1
100
μ
A
nA
V
GS
= –8 V
V
DS
= 0 V
–100
nA
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
–0.4
–0.6
2
–1
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –4.5 V,
I
D
= –6 A
I
D
= –6 A
T
J
=125
°
C
I
D
= –4 A
V
DS
= –5 V
I
D
= –6 A
V
GS
= –2.5 V,
V
GS
= –4.5 V,
V
DS
= –10 V,
0.040
0.067
0.050
0.050
0.083
0.070
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
6.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1240
270
100
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
15
45
30
13
1.8
3
16
25
65
50
19
ns
ns
ns
ns
nC
nC
nC
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.75
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 42°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 95°/W when mounted
on a .0066 in
2
pad of
2 oz copper
c) 110°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDT434P | 功能描述:MOSFET SOT-223 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDT439N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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