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參數資料
型號: FDU2572
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 150V, 29A, 54mз
中文描述: 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: TO-251AA, 3 PIN
文件頁數: 4/11頁
文件大?。?/td> 247K
代理商: FDU2572
2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
100
200
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
OPEAREA MAY BE
10
μ
s
10ms
1ms
DC
100
μ
s
0.1
1
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
10
20
30
40
50
60
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
10
20
30
40
50
60
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
40
50
55
60
0
10
I
D
, DRAIN CURRENT (A)
20
30
45
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=9A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關PDF資料
PDF描述
FDD2572 N-Channel PowerTrench MOSFET 150V, 29A, 54mз
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FDD3706 30V N-Channel PowerTrench MOSFET
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