- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375786 > FDU7030BL (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDU7030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 14 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 126K |
| 代理商： | FDU7030BL |
June 2003
2003 Fairchild Semiconductor Corp.
FDD7030BL/FDU7030BL Rev CW)
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench
ò
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor Drives
Features
56 A, 30 V
R
DS(ON)
= 9.5 m
@ V
GS
= 10 V
R
DS(ON)
= 13 m
@ V
GS
= 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Ratings
30
±
20
56
14
100
60
2.8
1.3
–55 to +175
Units
V
V
A
(Note 3)
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Package Marking and Ordering Information
Device Marking
Device
FDD7030BL
FDD7030BL
FDU7030BL
FDU7030BL
Operating and Storage Junction Temperature Range
°
C
(Note 1)
2.5
45
96
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD7030 | 30V N-Channel PowerTrench MOSFET |
| FDD7030BL | 30V N-Channel PowerTrench MOSFET |
| FDU8874 | N-Channel PowerTrench MOSFET 30V, 116A |
| FDD8874 | N-Channel PowerTrench MOSFET 30V, 116A |
| FDU8876 | N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDU7030BL_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU7N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FDU7N60NZTU | 功能描述:MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8580 | 功能描述:MOSFET 20V 35A 9 OHM NCH POWER TRENC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8586 | 功能描述:MOSFET 20V 35A 5.5 OHM NCH IPAK PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。