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參數(shù)資料
| 型號(hào)： | FDV302 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, P-Channel |
| 中文描述： | 數(shù)字場(chǎng)效應(yīng)管，P溝道 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | FDV302 |
FDV302P REV. F
0
0.01
0.1
1
10
100
300
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =357° C/W
T = 25°C
θ
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 357 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve
.
0.1
0.3
1
2
5
10
15
25
1
2
3
5
10
15
25
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
Q , GATE CHARGE (nC)
-
G
V = -5V
-10
-15
I = -0.2A
1
2
5
10
15
20
30
40
0.01
0.02
0.05
0.1
0.2
0.5
1
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
DC
1s
100ms
1ms
10s
V = -2.7V
SINGLE PULSE
R = 357 °C/W
T = 25°C
JA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
| FDV304P | Digital FET, P-Channel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDV302P | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P DIGITAL SOT-23 |
| FDV302P_D87Z | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P_NB8V001 | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDV302P_Q | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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