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參數資料
| 型號： | FDW2503W |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 5.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 20V的五（巴西）直| 5.5AI（四）|蘇 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 154K |
| 代理商： | FDW2503W |
April 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDW2503N Rev C (W)
FDW2503N
Dual N-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
5.5 A, 20 V.
R
DS(ON)
= 0.021
@ V
GS
= 4.5 V
R
DS(ON)
= 0.035
@ V
GS
= 2.5 V
Extended V
GSS
range (
±
12V) for battery applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation
Ratings
20
±
12
5.5
30
1.0
0.6
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2503N
FDW2503N
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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