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參數資料
| 型號： | FDW2601NZ_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TSSOP-8 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 270K |
| 代理商： | FDW2601NZ_NL |
2004 Fairchild Semiconductor Corporation
FDW2601NZ Rev. A
December 2004
www.fairchildsemi.com
F
1
FDW2601NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
Features
!
8.2A, 30V r
DS(ON)
= 0.015
,
V
GS
= 4.5V
r
DS(ON)
= 0.020
,
V
GS
= 2.5V
!
Extended
V
GS
range (
±
12 V) for battery applications
!
HBM ESD Protection Level of 3.5kV Typical (note 3)
!
High performance trench technology for extremely low
r
DS(ON)
!
Low profile TSSOP-8 package
Applications
!
Load switch
!
Battery charge
!
Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
TSSOP-8
D1
G1
S1
D2
G2
S2
S2
D2
G2
S2
G1
S1
S1
D1
Pin 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW262P | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW262P_Q | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW264P | 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-W44 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDW6923 | 功能描述:MOSFET P-Ch 2.5V Clock Multiplier RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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