欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): FDZ294N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述: 6 A, 20 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-9
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 146K
代理商: FDZ294N
July 2005
2005 Fairchild Semiconductor Corporation
FDZ294N Rev. B3 (W)
FDZ294N
N-Channel 2.5 V Specified PowerTrench
BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ294N minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
Battery management
Battery protection
Features
6 A, 20 V
R
DS(ON)
= 23 m
@ V
GS
= 4.5 V
R
DS(ON)
= 34 m
@ V
GS
= 2.5 V
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability.
GATE
Bottom
Top
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
6
10
1.7
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
°
C/W
Package Marking and Ordering Information
Device Marking
Device
E
FDZ294N
Reel Size
7”
Tape width
8mm
Quantity
3000 units
F
Index
slot
相關(guān)PDF資料
PDF描述
FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ299P LED, RT ANGLE, BLUE, SM
FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET
FDZ7064AS 30V N-Channel PowerTrench SyncFET BGA MOSFET
FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ294P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ295P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ298N 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ298N_Q 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ298N-Q (744) DIE 制造商:Fairchild Semiconductor Corporation 功能描述:
主站蜘蛛池模板: 会理县| 文化| 岫岩| 普兰县| 会同县| 屏边| 军事| 全州县| 古丈县| 松原市| 乳山市| 峨边| 金华市| 伊春市| 咸丰县| 石林| 剑河县| 尉犁县| 邛崃市| 恭城| 江安县| 上思县| 高淳县| 手游| 盐源县| 长春市| 蛟河市| 浦东新区| 军事| 白沙| 桐庐县| 南靖县| 安徽省| 宣恩县| 芜湖市| 专栏| 莒南县| 耒阳市| 长治市| 原平市| 西平县|