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參數資料
| 型號： | FDZ7064S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | TERMINAL |
| 中文描述： | 13.5 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-30 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 231K |
| 代理商： | FDZ7064S |
FDZ7064S Rev B2 (W)
Typical Characteristics
0.00
10.00
20.00
30.00
40.00
50.00
60.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
3.5V
2.5V
2.0V
V
GS
=10.0
V
6.0V
4.5V
0.75
1
1.25
1.5
1.75
2
2.25
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
50
60
R
D
,
D
V
GS
= 2.5V
3.5V
3.0V
4.0V
4.5V
6.0V
10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.60
0.80
1.00
1.20
1.40
1.60
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
R
D
,
I
D
= 13.5A
V
GS
= 10V
0
10
20
30
40
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
=6.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
2.5
3
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
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|---|---|
| FDZ7296 | 功能描述:MOSFET 30V N-Ch PowerTrench BGA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FE | 制造商:Power-One 功能描述: 制造商:Schneider-Square D 功能描述:9007T/FT limit switch lever 制造商:Schneider Electric 功能描述:Switch Access Limit Switch Operating Lever |
| FE 0300 0012 | 功能描述:折皺器 SPARE PART FOR FE 0300 RoHS:否 制造商:Hirose Connector 類型: 描述/功能:Cable and Shield Crimper |
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