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參數資料
| 型號： | FFB3904 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 77K |
| 代理商： | FFB3904 |
F
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
EB
= 0
V
CE
= 30 V, V
EB
= 0
40
60
6.0
V
V
V
nA
nA
50
50
OFF CHARACTERISTICS
ON CHARACTERISTICS*
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
I
C
= 100
μ
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
450
MHz
C
obo
Output Capacitance
2.5
pF
C
ibo
Input Capacitance
6.0
pF
NF
Noise Figure
(except MMPQ3904)
2.0
dB
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
18
20
150
25
ns
ns
ns
ns
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.65
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FFB3904_1 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Multi-Chip General Purpose Amplifier |
| FFB3904_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FFB3906 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FFB3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP 40V 0.2A SC70-6 |
| FFB3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR |
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