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參數資料
| 型號： | FFM107 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | 1A FAST RECOVERY SMA DIODES |
| 中文描述： | 形狀記憶合金第1A快恢復二極管 |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | FFM107 |
LESHAN RADIO COMPANY, LTD.
49A–2/2
FFM101 – FFM107
1A
RATING & CHARACTERISTIC CURVES OF 1A FAST RECOVERY SMA DIODES
FIG. 2 – TYPICAL FORWARD
CURRENT DERATING CURVE
AMBIENT TEMPER ATURE, (oC)
+0.5A
0
-0.25A
-1.0A
1cm
Trr
NOTES:1.Rise Time=7ns max.
Input Impedance=1megohm.22pF.
2.Rise Time=10ns max.
Source Impedance=50 ohms.
(+)
PULSE
GENERATOR
(NOTE 2)
(-)
D.U.T.
OSCILLOSCOPE
(NOTE 1)
1
NON.
INDUCTIVE
(2(-)
50
10
NONINDUCTIVE
NONINDUCTIVE
FIG.1–TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
SET TIME
A
BASE FOR 50/100ns/cm
25
50
75
100
125
150
175
1.25
1.00
0.75
0.50
0.25
0
Single Phase
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
5
10
50
100
50
40
30
20
10
0
.4
.6
.8
1.0
1.2
1.4
1.6
100
10
1.0
0
T
J
=25oC
Pulse Width=300
μ
s
1% Duty Cycle
.1
.2
.4
1.0
2
4
10
20
40
100
200
100
60
40
20
10
6
4
2
1
T
J
=25oC
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
FIG. 4 – MAXINUM NON-REPETITIVE
FOWARD SURGE CURRENT
J
REVERSE VOLTAGE,(V)
P
NUMBER OF CYCLES AT 60Hz
FIG. 3 – TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,(V)
I
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FFM107FL | 制造商:JINANJINGHENG 制造商全稱:Jinan Jingheng (Group) Co.,Ltd 功能描述:FAST Recovery Rectifiers |
| FFM107L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere |
| FFM107-L | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Silicon Rectifier Fast recovery type |
| FFM107-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Fast recovery type |
| FFM107-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Silicon Rectifier - Fast recovery type |
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