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參數資料
| 型號： | FG2000FX-50DA |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 72K |
| 代理商： | FG2000FX-50DA |
Aug.1998
10
0
2 3
5 7 10
1
8
4
2 3
5 7 10
2
12
16
20
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
T
j
= 125°C
10
0
2 3
10
2
5 710
3
2 3 5 710
4
2 3 5 710
5
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
FGM
= 10V
V
GT
= 1.5V
P
FG(AV)
= 50W
I
FGM
= 100A
T
j
= 25°C
P
FGM
= 280W
I
GT
= 2500mA
0.020
0
10
–3
2 3
5 710
–2
2 3
10
0
5 710
1
2 3 5 710
–1
2 3 5 710
0
0.008
0.012
0.016
0.004
O
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
S
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
G
GATE CURRENT (mA)
GATE CHARACTERISTICS
T
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
2.4
50
50
50
—
10
—
1.5
2500
0.017
V
mA
mA
mA
V/
μ
s
μ
s
A
V
mA
°
C/W
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
T
j
= 125
°
C, I
TM
= 2000A, Instantaneous measurment
T
j
= 125
°
C, V
RRM
Applied
T
j
= 125
°
C, V
DRM
Applied, V
GK
= –2V
T
j
= 125
°
C, V
RG
= 17V
T
j
= 125
°
C, V
D
= 1250V, V
GK
= –2V
T
j
= 125
°
C, I
TM
= 2200A, I
GM
= 30A, V
D
= 1250V
Junction to fin
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Typ
—
—
—
—
—
—
Min
—
—
—
—
1000
—
Max
Unit
V
TM
I
RRM
I
DRM
I
RG
d
v
/d
t
t
gt
I
GQM
V
GT
I
GT
R
th(j-f)
t
gq
Turn-off time
T
j
= 125
°
C, I
TM
= 2200A, V
DM
= 1875V, d
iGQ
/d
t
= –30A/
μ
s
V
RG
= 17V, C
S
= 4.0
μ
F, L
S
= 0.3
μ
H
DC METHOD : V
D
= 24V, R
L
= 0.1
, T
j
= 25
°
C
—
—
30
μ
s
610
—
—
—
—
—
—
—
PERFORMANCE CURVES
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