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參數資料
| 型號： | FGB30N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 177K |
| 代理商： | FGB30N6S2 |
2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
20
25
75
100
125
150
40
30
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
40
60
20
70
50
30
10
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
30
10
20
1000
100
T
C
75
o
C
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.49
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
100
150
200
250
300
350
9
10
11
12
13
14
15
16
2
4
6
8
10
12
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
I
SC
t
SC
0.50
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
6
1.50
2.25
14
8
18
16
1.25
4
10
12
1.75
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 125
o
C
T
J
= 150
o
C
0.75
2.00
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
18
.5
1
1.50
2.0
2.25
.75
1.75
1.25
2
6
14
8
16
4
10
12
T
J
= 125
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
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