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參數資料
| 型號： | FGC4000BX-90DS |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | FGC4000BX-90DS |
Aug.1998
A
A
A
kA
A
2
s
A/
μ
s
V
V
A
A
kW
kW
W
W
°
C
°
C
kN
g
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC4000BX-90DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
FGC4000BX-90DS
OUTLINE DRAWING
Dimensions in mm
4000
1880
1200
25
2.6
×
10
6
1000
10
21
1000
4000
10
120
200
6300
–20 ~ +125
–20 ~ +150
32 ~ 48
1500
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
+
: V
GK
= –2V
V
RRM
V
RSM
V
R(DC)
V
DRM
V
DSM
V
D(DC)
V
LTDS
Unit
Symbol
Parameter
V
V
V
V
V
V
V
Voltage class
90DS
21
21
21
4500
4500
3600
3000
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
Long term DC stability voltage
+
I
TQRM
I
T(RMS)
I
T(AV)
I
TSM
I
2t
d
iT
/d
t
V
FGM
V
RGM
I
FGM
I
RGM
P
FGM
P
RGM
P
FG(AV)
P
RG(AV)
T
j
T
stg
—
—
G
I
TQRM
Repetitive controllable on-state current
...........4000A
G
I
T(AV)
Average on-state current.....................1200A
G
V
DRM
Repetitive peak off state voltage
...................4500V
G
Anode short type
(Snubberless)
V
DM
= 4500V, V
D
= 2250V, L
C
= 0.2
μ
H, V
RG
= 21V
d
iGQ
/d
t
= 6000A/
μ
s. Tj = 25/125
°
C
Applied for all conduction angles
f = 60Hz, sinewave
θ
= 180
°
, T
f
= 70
°
C
One half cycle at 60Hz, T
j
= 125
°
C
V
D
= 2250V, I
TM
= 4000A, I
GM
= 200A, T
j
= 125
°
C
di
G
/d
t
= 100A/
μ
s (Snubberless)
(Recommended value 40kN)
Typical value
φ
3.5 ± 0.2 2.2 ± 0.2DEPTH
φ
85 ± 0.2
φ
120MAX
(
φ
127)
2
M3
0.5 2.5DEPTH
(4 )
NOTE1
0
0
(
φ
134±04
22.5° ± 0.5°
16-
φ
4.5+0
φ
147 ± 0.4
φ
85 ± 0.2
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