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參數資料
| 型號： | FGC800A-130DS |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | FGC800A-130DS |
Mar. 2001
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC800A-130DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
FGC800A-130DS
OUTLINE DRAWING
Dimensions in mm
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
G
Symmetrical GCT
G
I
TQRM
Repetitive controllable on-state current
............ 800A
G
I
T(AV)
Average on-state current...................... 330A
G
V
DRM
Repetitive peak off-state voltage
.................. 6500V
6
φ
5
±
6-
φ
5
±
02
GATE
CATHODE
4
±
4
±
1
±
GATE
CATHODE
GATE
GATE
CATHODE
CATHODE
(4
1
±
.
GATE
GATE
CATHODE
CATHODE
1
±
.
φ
3.5
±
0.2
2.2
±
0.2 DEPTH
φ
3.5
±
0.2
2.2
±
0.2 DEPTH
φ
47
±
0.2
φ
75MAX
φ
47
±
0.2
2
±
0
0
(
(
φ
48.8)
Unit
V
V
V
V
V
Symbol
V
RRM
V
RSM
V
DRM
V
DSM
V
LTDS
Parameter
Voltage class
6500
6500
6500
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MAXIMUM RATINGS
Conditions
—
—
V
GK
= –2V
V
GK
= –2V
V
GK
= –2V,
λ
= 100 Fit
520
330
4.8
9.6
×
10
4
10
21
500
800
5
17
100
120
–20 ~ +115
–20 ~ +150
11.1 ~ 15.8
530
V
DM
= 3/4 V
DRM
, V
D
= 3000V, L
C
= 0.3
μ
H, V
RG
= 20V
T
j
= 25/115
°
C, With GU-D08
Applied for all conduction angles
f = 60Hz, sinewave
θ
= 180
°
, T
f
= 55
°
C
(see Fig. 1, 3)
V
D
= 3000V, I
T
= 800A, C
S
= 0.1
μ
F, R
S
= 10
T
j
= 25/115
°
C, f = 60Hz, With GU-D08
(see Fig. 1,2 )
(Recommended value 13kN)
Typical value
One half cycle at 60Hz, T
j
= 115
°
C Start
Ratings
A
A
kA
A
2
s
V
V
A
A
kW
kW
W
W
°
C
°
C
kN
g
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
I
T(RMS)
I
T(AV)
I
TSM
I
2t
V
FGM
V
RGM
I
FGM
I
RGM
P
FGM
P
RGM
P
FG(AV)
P
RG(AV)
T
j
T
stg
—
—
Symbol
Parameter
Conditions
I
TQRM
Repetitive controllable on-state current
800
Unit
A
d
iT
/d
t
Critical rate of rise of on-state current
1000
A/
μ
s
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