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參數資料
| 型號： | FGH20N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 6/9頁 |
| 文件大小： | 232K |
| 代理商： | FGH20N6S2D |
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
2
25
o
C
125
o
C
14
8
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
14
4
2
125
o
C t
a
125
o
C t
b
, t
rr
12
8
10
6
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
50
150
250
25
o
C t
b
, t
rr
25
o
t
a
25
o
C t
b
I
EC
= 7A, V
CE
= 390V
t
a
,
b
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
40
0
60
80
100
160
20
1000
200
300
600
400
500
125
o
C t
b
125
o
C t
a
25
o
C t
a
140
120
700
800
900
250
200
150
100
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
300
500
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
350
1000
200
300
600
400
500
700
800
900
450
400
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3.0
5.0
4.5
6.0
5.5
I
EC
= 3.5A
S
4.0
3.5
1000
200
300
600
400
500
700
800
900
I
EC
= 7A
V
CE
= 390V, T
J
= 125
°
C
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3
5
4
10
6
I
EC
= 7A
I
EC
= 3.5A
I
7
V
CE
= 390V, T
J
= 125
°
C
9
8
1000
200
300
600
400
500
700
800
900
相關PDF資料 |
PDF描述 |
|---|---|
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT |
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| FGH30N120FTD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Field stop trench technology |
| FGH30N120FTDTU | 功能描述:IGBT 晶體管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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