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參數資料
| 型號： | FGH30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 281K |
| 代理商： | FGH30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
20
25
75
100
125
150
40
30
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
40
60
20
70
50
30
10
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100mH
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
30
10
20
1000
100
T
C
75
o
C
T
J
= 125
o
C, R
G
= 3
, L = 200mH, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.49
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
100
150
200
250
300
350
9
10
11
12
13
14
15
16
2
4
6
8
10
12
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
I
SC
t
SC
0.50
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
6
1.50
2.25
14
8
18
16
1.25
4
10
12
1.75
PULSE DURATION = 250ms
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 125
o
C
T
J
= 150
o
C
0.75
2.00
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
18
.5
1
1.50
2.0
2.25
.75
1.75
1.25
2
6
14
8
16
4
10
12
T
J
= 125
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250ms
T
J
= 150
o
C
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|---|---|
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH30N6S2 | 600V, SMPS II Series N-Channel IGBT |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH30N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH30S130P | 功能描述:IGBT 晶體管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH30T65UPDT_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3 |
| FGH40N120AN | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGH40N120ANTU | 功能描述:IGBT 晶體管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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