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參數資料
| 型號： | FGH30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 281K |
| 代理商： | FGH30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
25
50
7
9
16
75
150
5
125
100
175
6
8
10
11
12
13
14
15
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= -55
o
C
T
J
= 125
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
2
6
10
12
0
14
16
14
16
18
24
4
8
20
I
G(REF)
= 1mA, R
L
= 25
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
22
I
CE
= 6A
0
0.6
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.8
125
25
1.2
E
T
,
1.0
I
CE
= 24A
I
CE
= 12A
0.4
0.2
R
G
= 10
, L = 500mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
150
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
10
1
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
1.4
0.8
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
FREQUENCY = 1MHz
1.5
2.0
2.5
3.0
3.5
6
7
8
9
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
C
,
I
CE
= 12A
DUTY CYCLE < 0.5%
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
I
CE
= 6A
I
CE
= 24A
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| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
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相關代理商/技術參數 |
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| FGH30N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
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| FGH40N120AN | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGH40N120ANTU | 功能描述:IGBT 晶體管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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