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參數資料
| 型號： | FGH40N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 5/8頁 |
| 文件大小： | 176K |
| 代理商： | FGH40N6S2 |
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
5
6
7
8
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
3
125
100
200
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
4
11
10
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 15
V
CE
= 200V
4
8
12
V
CE
= 600V
5
10
15
20
0
V
CE
= 400V
14
16
25
30
35
I
CE
= 10A
0
1.2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
1.6
125
25
150
2.4
E
T
,
2.0
I
CE
= 40A
I
CE
= 20A
0.8
0.4
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3
, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.0
1.0
3.0
2.5
FREQUENCY = 1MHz
C
OES
C
IES
60
80
100
0.5
1.5
2.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
2.0
2.8
2.4
8
10
11
12
16
3.2
V
C
,
I
CE
= 40A
PULSE DURATION = 250
μ
s
3.6
7
13
14
15
DUTY CYCLE < 0.5%
4.0
I
CE
= 10A
I
CE
= 20A
相關PDF資料 |
PDF描述 |
|---|---|
| FGP40N6S2 | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes |
| FGB40N6S2 | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGH50N3 | 300V, PT N-Channel IGBT |
| FGH50N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH50N6S2 | 600V, SMPS II Series N-Channel IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH40N6S2D | 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH40N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH40T100SMD | 功能描述:IGBT 晶體管 1000V 40A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH40T120SMD | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube |
| FGH40T120SMD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 40A TRENCH TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 80A 555W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 40A FS2 Trench IGBT |
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